MOSFET 2P-CH 20V 8.2A 8DSO
| Part | Technology | FET Feature | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Package / Case | Package / Case [y] | Package / Case [x] | Vgs(th) (Max) @ Id [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Configuration | Input Capacitance (Ciss) (Max) @ Vds | Power - Max [Max] | Mounting Type | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET (Metal Oxide) | Logic Level Gate | -55 °C | 150 °C | 20 V | 8.2 A | 8-SOIC | 3.9 mm | 0.154 in | 1.2 V | 48.6 nC | 2 P-Channel | 2242 pF | 2 W | Surface Mount | 21 mOhm | ||||
Infineon Technologies | MOSFET (Metal Oxide) | Logic Level Gate | -55 °C | 150 °C | 20 V | 7 A | 8-SOIC | 3.9 mm | 0.154 in | 1.2 V | 2 P-Channel | 3750 pF | 1.6 W | Surface Mount | 21 mOhm | 39 nC | ||||
Infineon Technologies | MOSFET (Metal Oxide) | -55 °C | 150 °C | 20 V | 7 A | 8-SOIC | 3.9 mm | 0.154 in | 1.2 V | 39 nC | 3750 pF | Surface Mount | P-Channel | 2.5 V 4.5 V | 12 V |