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Complementary Pair Enhancement Mode MOSFET
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Complementary Pair Enhancement Mode MOSFET
Complementary Pair Enhancement Mode MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs [Max] | Package / Case | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Gate Charge (Qg) (Max) @ Vgs | Power - Max [Max] | Technology | Configuration | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 3.3 A 4 A | 416 pF 536 pF | -55 °C | 150 °C | 42 mOhm 70 mOhm | SOT-23-6 Thin TSOT-23-6 | 1 V 1.2 V | 20 V | 10.5 nC | 6.5 nC | 700 mW | MOSFET (Metal Oxide) | N and P-Channel Complementary | Surface Mount |