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20 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Package Name | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Vgs(th) (Max) | Input Capacitance (Ciss) (Max) | FET Type | Gate Charge (Max) | Current - Continuous Drain (Id) (Ta) | Mounting Type | Vgs (Max) | Rds On (Max) | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Technology | Package / Case | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 6-TSOP | 20 V | 6.25 W 530 mW | -55 °C | 150 °C | 1.25 V | 1000 pF | P-Channel | 13 nC | 4.1 A | Surface Mount | 12 V | 55 mOhm | 2.5 V | 4.5 V | MOSFET (Metal Oxide) | SC-74 SOT-457 | ||
 Nexperia USA Inc. | 6-TSOP | 20 V | 7.5 W 660 mW | -55 °C | 175 °C | 1.3 V | 679 pF | P-Channel | 10 nC | 4.4 A | Surface Mount | 12 V | 49 mOhm | 2.5 V | 8 V | MOSFET (Metal Oxide) | SC-74 SOT-457 | AEC-Q101 | Automotive |
Nexperia USA Inc. | 6-TSOP | 20 V | 6.25 W 530 mW | -55 °C | 150 °C | 1.25 V | 1000 pF | P-Channel | 13 nC | 4.1 A | Surface Mount | 12 V | 55 mOhm | 2.5 V | 4.5 V | MOSFET (Metal Oxide) | SC-74 SOT-457 | AEC-Q101 | Automotive |