SST38VF6403B Series

Catalog

2.7V TO 3.6V 64MBIT PM PARALLEL ADVANCED MPF 48 TFBGA 6X8X1.2MM TRAY ROHS COMPLIANT: YES

Part	Technology	Voltage - Supply [Min]	Voltage - Supply [Max]	Supplier Device Package	Mounting Type	Memory Interface	Memory Size	Package / Case	Write Cycle Time - Word, Page	Memory Organization	Operating Temperature [Max]	Operating Temperature [Min]	Memory Type	Memory Format	Access Time	Package / Case [y]	Package / Case [y]
Microchip Technology SST38VF6404B-70I/CD	FLASH	2.7 V	3.6 V	48-TFBGA (6x8)	Surface Mount	Parallel	64 Gbit	48-TFBGA	10 µs	4M x 16	85 °C	-40 °C	Non-Volatile	FLASH	70 ns
Microchip Technology SST38VF6403BT-70I/CD	FLASH	2.7 V	3.6 V	48-TFBGA (6x8)	Surface Mount	Parallel	64 Gbit	48-TFBGA	10 µs	4M x 16	85 °C	-40 °C	Non-Volatile	FLASH	70 ns
Microchip Technology SST38VF6403B-70I/TV	FLASH	2.7 V	3.6 V	48-TSOP	Surface Mount	Parallel	64 Gbit	48-TFSOP	10 µs	4M x 16	85 °C	-40 °C	Non-Volatile	FLASH	70 ns	18.4 mm	0.724 in
Microchip Technology SST38VF6403B-70I/CD	FLASH	2.7 V	3.6 V	48-TFBGA (6x8)	Surface Mount	Parallel	64 Gbit	48-TFBGA	10 µs	4M x 16	85 °C	-40 °C	Non-Volatile	FLASH	70 ns

Catalog

Key Features

• + Organized as 4M x16

• + Single Voltage Read and Write Operations– 2.7-3.6V

• + Superior Reliability– Endurance: 100,000 Cycles minimum– Greater than 100 years Data Retention

• + Low Power Consumption (typical values at 5 MHz)– Active Current: 25 mA (typical)– Standby Current: 5 µA (typical)– Auto Low Power Mode: 5 µA (typical)

• + 128-bit Unique ID

• + Security-ID Feature– 248 Word, user One-Time-Programmable

• + Protection and Security Features– Hardware Boot Block Protection/WP# Input Pin, Uniform(32 KWord) and Non-Uniform (8 KWord) optionsavailable– User-controlled individual block (32 KWord) protection,using software only methods– Password protection

• + Hardware Reset Pin (RST#)

• + Fast Read and Page Read Access Times:– 70 ns Read access time– 25 ns Page Read access times- 8-Word Page Read buffer

• + Latched Address and Data

• + Fast Erase Times:– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)

• + Erase-Suspend/-Resume Capabilities

• + Fast Word and Write-Buffer Programming Times:– Word-Program Time: 7 µs (typical)– Write Buffer Programming Time: 1.75 µs / Word (typical)- 16-Word Write Buffer

• + Automatic Write Timing– Internal VPP Generation

• + End-of-Write Detection– Toggle Bits– Data# Polling– RY/BY# Output

• + CMOS I/O Compatibility

• + JEDEC Standard– Flash EEPROM Pinouts and command sets

• + CFI Compliant

• + Packages Available– 48-lead TSOP– 48-ball TFBGA

• + All non-Pb (lead-free) devices are RoHS compliant

Description

The SST38VF6401B/6402B/6403B/6404B are 4M x16 CMOS Advanced Multi-Purpose Flash Plus (Advanced MPF+) devices manufactured with SST proprietary, high-performance CMOS Super- Flash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST38VF6401B/6402B/6403B/6404B write (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pin assignments for x16 memories. Please see documents section for the Silicon Errata for this device.