MOSFET N/P-CH 55V/30V 40A TO263
| Part | Supplier Device Package | Technology | Power - Max | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Configuration | Vgs(th) (Max) @ Id | Package / Case | FET Feature | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | PG-TO263-5-1 | MOSFET (Metal Oxide) | 69 W 96 W | 121 nC | 30 V 55 V | Surface Mount | 6100 pF | 40 A | 11.7 mOhm | N and P-Channel | 2.2 V | D2PAK (5 Leads + Tab) TO-263-6 TO-263BA | Logic Level Gate | -55 °C | 150 °C |