IC DRAM 128MBIT PAR 66TSOP II
| Part | Memory Format | Clock Frequency | Supplier Device Package | Voltage - Supply [Max] | Voltage - Supply [Min] | Memory Type | Package / Case [custom] | Package / Case | Package / Case [custom] | Memory Size | Mounting Type | Access Time | Write Cycle Time - Word, Page | Operating Temperature [Max] | Operating Temperature [Min] | Memory Interface | Memory Organization |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Etron Technology, Inc. EM6A9160TSC-4G | DRAM | 250 MHz | 66-TSOP II | 2.7 V | 2.3 V | Volatile | 0.4 in | 66-TSSOP | 0.4 in | 128 Mb | Surface Mount | 700 ps | 12 ns | 70 °C | 0 °C | Parallel | 8M x 16 |