VOS617 Series

Manufacturer: Vishay General Semiconductor - Diodes Division

Catalog

OPTOISOLATOR 3.75KV TRANS 4-SSOP

Part	Voltage - Forward (Vf) (Typ)	Turn On / Turn Off Time (Typ)	Mounting Type	Voltage - Isolation	Operating Temperature [Min]	Operating Temperature [Max]	Output Type	Current - DC Forward (If) (Max)	Vce Saturation (Max) [Max]	Number of Channels	Current Transfer Ratio (Min) [Min]	Package / Case [y]	Package / Case	Package / Case [x]	Input Type	Current Transfer Ratio (Max)	Supplier Device Package	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current - Output / Channel	Current Transfer Ratio (Max) [Max]
Vishay General Semiconductor - Diodes Division VOS617A-3T	1.18 V	4 µs 6 µs	Surface Mount	3750 Vrms	-55 °C	110 °C	1.81 mOhm	50 mA	400 mV	1	100 %	4.4 mm	4-SOIC	0.173 in	DC	200 %	4-SOP	3 µs	3 µs	50 mA
Vishay General Semiconductor - Diodes Division VOS617A-7X001T	1.18 V	4 µs 6 µs	Surface Mount	3750 Vrms	-55 °C	110 °C	1.81 mOhm	50 mA	400 mV	1	80 %	4.4 mm	4-SOIC	0.173 in	DC		4-SSOP	3 µs	3 µs	50 mA	160 %
Vishay General Semiconductor - Diodes Division VOS617A-4X001T	1.18 V	4 µs 6 µs	Surface Mount	3750 Vrms	-55 °C	110 °C	1.81 mOhm	50 mA	400 mV	1	160 %	4.4 mm	4-SOIC	0.173 in	DC		4-SSOP	3 µs	3 µs	50 mA	320 %
Vishay General Semiconductor - Diodes Division VOS617A-9T	1.18 V	4 µs 6 µs	Surface Mount	3750 Vrms	-55 °C	110 °C	1.81 mOhm	50 mA	400 mV	1	200 %	4.4 mm	4-SOIC	0.173 in	DC	400 %	4-SSOP	3 µs	3 µs	50 mA
Vishay General Semiconductor - Diodes Division VOS617A-2X001T	1.18 V	4 µs 6 µs	Surface Mount	3750 Vrms	-55 °C	110 °C	1.81 mOhm	50 mA	400 mV	1	63 %	4.4 mm	4-SOIC	0.173 in	DC	125 %	4-SSOP	3 µs	3 µs	50 mA
Vishay General Semiconductor - Diodes Division VOS617A-8T	1.18 V	4 µs 6 µs	Surface Mount	3750 Vrms	-55 °C	110 °C	1.81 mOhm	50 mA	400 mV	1	130 %	4.4 mm	4-SOIC	0.173 in	DC	260 %	4-SSOP	3 µs	3 µs	50 mA
Vishay General Semiconductor - Diodes Division VOS617A-9X001T	1.18 V	4 µs 6 µs	Surface Mount	3750 Vrms	-55 °C	110 °C	1.81 mOhm	50 mA	400 mV	1	200 %	4.4 mm	4-SOIC	0.173 in	DC	400 %	4-SSOP	3 µs	3 µs	50 mA
Vishay General Semiconductor - Diodes Division VOS617A-X001T	1.18 V	4 µs 6 µs	Surface Mount	3750 Vrms	-55 °C	110 °C	1.81 mOhm	50 mA	400 mV	1	50 %	4.4 mm	4-SOIC	0.173 in	DC		4-SSOP	3 µs	3 µs	50 mA	600 %
Vishay General Semiconductor - Diodes Division VOS617AT	1.18 V	4 µs 6 µs	Surface Mount	3750 Vrms	-55 °C	110 °C	1.81 mOhm	50 mA	400 mV	1	50 %	4.4 mm	4-SOIC	0.173 in	DC		4-SSOP	3 µs	3 µs	50 mA	600 %