DMT6013LFDF Series

60V N-Channel Enhancement Mode MOSFET

Catalog

60V N-Channel Enhancement Mode MOSFET

Part	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Power Dissipation (Max) [Max]	FET Type	Power Dissipation (Max)	Package / Case [y]	Package / Case [x]
Diodes Inc DMT6013LFDF-7	U-DFN2020-6 (Type F)	1081 pF	60 V	Surface Mount	20 V	6-UDFN Exposed Pad	15 mOhm	4.5 V 10 V	2.3 V	10 A	-55 °C	150 °C	MOSFET (Metal Oxide)	900 mW	N-Channel
Diodes Inc DMT6013LSS-13	8-SOP	1081 pF	60 V	Surface Mount	20 V	8-SOIC	14.3 mOhm	4.5 V 10 V	2.5 V	10 A	-55 °C	150 °C	MOSFET (Metal Oxide)		N-Channel	1.4 W	3.9 mm	0.154 in

Catalog

60V N-Channel Enhancement Mode MOSFET

Key Features

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• High Conversion Efficiency

• Low RDS(ON) – Minimizes On-State Losses

• Low Input Capacitance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high-efficiency power management applications.