1N649 Series

Catalog

DIODE GEN PURP 600V 400MA DO35

Part	Technology	Voltage - DC Reverse (Vr) (Max)	Qualification	Package Name	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Speed - Recovery Time	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max)	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Grade	Package / Case	Current - Reverse Leakage	Mounting Type
Microchip Technology JAN1N649-1	Standard	600 V	240 MIL-PRF-19500	DO-204AH (DO-35)	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	400 mA	1 V	175 °C	-65 °C	Military	Axial DO-204AH DO-35	50 nA	Through Hole
Microchip Technology 1N649UR-1	Standard	600 V		DO-213AA	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	400 mA	1 V	175 °C	-65 °C		DO-213AA	50 nA	Surface Mount
Microchip Technology 1N649-1	Standard	600 V		DO-204AH (DO-35)	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	400 mA	1 V	175 °C	-65 °C		Axial DO-204AH DO-35	50 nA	Through Hole