
MIC4426 Series
Manufacturer: Microchip Technology
IC GATE DRVR LOW-SIDE 8DIP
| Part | Gate Type | Voltage - Supply (Maximum) | Voltage - Supply (Minimum) | Fall Time (Typ) | Rise Time (Typ) | Package Length | Package Name | Package Width | Logic Voltage - VIH | Logic Voltage - VIL | Operating Temperature (Min) | Operating Temperature (Max) | Driven Configuration | Input Type | Gate Channel | Current - Peak Output (Sink) | Current - Peak Output (Source) | Channel Type | Number of Drivers | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 18 V | 4.5 V | 29 ns | 20 ns | 0.3 in | 8-DIP 8-PDIP | 7.62 mm | 2.4 V | 0.8 V | -40 °C | 150 °C | Low-Side | Inverting | N-Channel P-Channel | 1.5 A | 1.5 A | Independent | 2 | Through Hole |
Microchip Technology | MOSFET | 18 V | 4.5 V | 29 ns | 20 ns | 0.118 in | 8-MSOP 8-TSSOP 8-MSOP | 3 mm | 2.4 V | 0.8 V | -40 °C | 150 °C | Low-Side | Inverting | N-Channel P-Channel | 1.5 A | 1.5 A | Independent | 2 | Surface Mount |
Microchip Technology | MOSFET | 18 V | 4.5 V | 29 ns | 20 ns | 0.3 in | 8-DIP 8-PDIP | 7.62 mm | 2.4 V | 0.8 V | -40 °C | 150 °C | Low-Side | Inverting | N-Channel P-Channel | 1.5 A | 1.5 A | Independent | 2 | Through Hole |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 18 V | 4.5 V | 29 ns | 20 ns | 0.154 in | 8-SOIC | 3.9 mm | 2.4 V | 0.8 V | -40 °C | 150 °C | Low-Side | Inverting | N-Channel P-Channel | 1.5 A | 1.5 A | Independent | 2 | Surface Mount |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 18 V | 4.5 V | 29 ns | 20 ns | 0.154 in | 8-SOIC | 3.9 mm | 2.4 V | 0.8 V | -40 °C | 150 °C | Low-Side | Inverting | N-Channel P-Channel | 1.5 A | 1.5 A | Independent | 2 | Surface Mount |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 18 V | 4.5 V | 29 ns | 20 ns | 0.154 in | 8-SOIC | 3.9 mm | 2.4 V | 0.8 V | -40 °C | 150 °C | Low-Side | Inverting | N-Channel P-Channel | 1.5 A | 1.5 A | Independent | 2 | Surface Mount |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 18 V | 4.5 V | 29 ns | 20 ns | 0.3 in | 8-DIP 8-PDIP | 7.62 mm | 2.4 V | 0.8 V | 0 °C | 150 °C | Low-Side | Inverting | N-Channel P-Channel | 1.5 A | 1.5 A | Independent | 2 | Through Hole |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 18 V | 4.5 V | 29 ns | 20 ns | 0.3 in | 8-DIP 8-PDIP | 7.62 mm | 2.4 V | 0.8 V | 0 °C | 150 °C | Low-Side | Inverting | N-Channel P-Channel | 1.5 A | 1.5 A | Independent | 2 | Through Hole |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 18 V | 4.5 V | 29 ns | 20 ns | 0.118 in | 8-MSOP 8-TSSOP 8-MSOP | 3 mm | 2.4 V | 0.8 V | -40 °C | 150 °C | Low-Side | Inverting | N-Channel P-Channel | 1.5 A | 1.5 A | Independent | 2 | Surface Mount |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 18 V | 4.5 V | 29 ns | 20 ns | 0.118 in | 8-MSOP 8-TSSOP 8-MSOP | 3 mm | 2.4 V | 0.8 V | -40 °C | 150 °C | Low-Side | Inverting | N-Channel P-Channel | 1.5 A | 1.5 A | Independent | 2 | Surface Mount |