MUR40040 Series
Manufacturer: GeneSiC Semiconductor
DIODE MODULE GP 400V 200A 2TOWER
| Part | Current - Average Rectified (Io) (per Diode) | Technology | Reverse Recovery Time (trr) | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Mounting Type | Package Name | Voltage - DC Reverse (Vr) (Max) | Diode Pair Count | Diode Configuration | Current - Reverse Leakage | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Package / Case | Voltage - Forward (Vf) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 200 A | Standard | 150 ns | 500 ns | 200 mA | Chassis Mount | Twin Tower | 400 V | 1 pair | Common Cathode | 25 µA | 150 °C | -55 °C | Twin Tower | 1.3 V |
GeneSiC Semiconductor | 200 A | Standard | 150 ns | 500 ns | 200 mA | Chassis Mount | Twin Tower | 400 V | 1 pair | Common Cathode | 25 µA | 150 °C | -55 °C | Twin Tower | 1.3 V |
GeneSiC Semiconductor | 200 A | Standard | 150 ns | 500 ns | 200 mA | Chassis Mount | Twin Tower | 400 V | 1 pair | Common Anode | 25 µA | 150 °C | -55 °C | Twin Tower | 1.3 V |
GeneSiC Semiconductor | 200 A | Standard | 150 ns | 500 ns | 200 mA | Chassis Mount | Twin Tower | 400 V | 1 pair | Common Anode | 25 µA | 150 °C | -55 °C | Twin Tower | 1.3 V |