IXFT26 Series

DiscMSFT NCh HiPerFET-Q Class TO-268AA

Catalog

DiscMSFT NCh HiPerFET-Q Class TO-268AA

Part	Package Name	Vgs (Max)	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	FET Type	Technology	Power Dissipation (Max)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta) (2)	Current - Continuous Drain (Id) (Ta)
LITTELFUSE IXFT26N50	TO-268AA	20 V	200 mOhm	10 V	160 nC	Surface Mount	500 V	4200 pF	-55 °C	150 °C	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	N-Channel	MOSFET (Metal Oxide)	300 W	4 V	26 A
LITTELFUSE IXFT26N60Q	TO-268AA	20 V	250 mOhm	10 V	200 nC	Surface Mount	600 V	5100 pF	-55 °C	150 °C	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	N-Channel	MOSFET (Metal Oxide)	360 W	4.5 V	26 A
LITTELFUSE IXFT26N60P	TO-268AA	30 V	270 mOhm	10 V	72 nC	Surface Mount	600 V	4150 pF	-55 °C	150 °C	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	N-Channel	MOSFET (Metal Oxide)	460 W	5 V	26 A
LITTELFUSE IXFT26N50Q	TO-268AA	20 V	200 mOhm	10 V	95 nC	Surface Mount	500 V	3900 pF	-55 °C	150 °C	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	N-Channel	MOSFET (Metal Oxide)	300 W	4.5 V	26 A
LITTELFUSE IXFT26N100XHV	TO-268HV (IXFT)	30 V	320 mOhm	10 V	113 nC	Surface Mount	1000 V	3290 pF	-55 °C	150 °C	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	N-Channel	MOSFET (Metal Oxide)	860 mW	6 V		2 A	26 A
LITTELFUSE IXFT26N60P	TO-268AA	30 V	270 mOhm	10 V	72 nC	Surface Mount	600 V	4150 pF	-55 °C	150 °C	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	N-Channel	MOSFET (Metal Oxide)	460 W	5 V	26 A
LITTELFUSE IXFT26N50Q TR	TO-268HV (IXFT)	20 V	200 mOhm	10 V	95 nC	Surface Mount	500 V	3900 pF	-55 °C	150 °C	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	N-Channel	MOSFET (Metal Oxide)	300 W	4.5 V	26 A

Catalog

DiscMSFT NCh HiPerFET-Q Class TO-268AA

Description

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on), low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings