DMT616MLSS Series

60V N-Channel Enhancement Mode MOSFET

Catalog

60V N-Channel Enhancement Mode MOSFET

Part	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id [Max]	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Rds On (Max) @ Id, Vgs	Technology
Diodes Inc DMT616MLSS-13	8-SOP	785 pF	4.5 V 10 V	-55 °C	150 °C	Surface Mount	8-SOIC	3.9 mm	0.154 in	2.2 V	60 V	N-Channel	13.6 nC	10 A	20 V	14 mOhm	MOSFET (Metal Oxide)

Catalog

60V N-Channel Enhancement Mode MOSFET

Key Features

• 100% Unclamped Inductive Switching (UIS) Test in Production— Ensures More Reliable and Robust End Application

• High Conversion Efficiency

• Low RDS(ON)—Minimizes On-State Losses

• Low Input Capacitance

• Fast Switching Speed

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, which makes it ideal for high-efficiency power management applications.