0.6A 200V 1.500 OHM N-CHANNEL
| Part | FET Type | Technology | Mounting Type | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Supplier Device Package | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Harris Corporation IRFD210 | N-Channel | MOSFET (Metal Oxide) | Through Hole | 20 V | 8.2 nC | 600 mA | 1 W | 4 V | 1.5 Ohm | 140 pF | -55 °C | 150 °C | 10 V | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 200 V |