DMTH4011SPDQ Series

40V 175°C Dual N-Channel Enhancement Mode MOSFET

Catalog

40V 175°C Dual N-Channel Enhancement Mode MOSFET

Part	Vgs(th) (Max) @ Id	Configuration	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Grade	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology
Diodes Inc DMTH4011SPDQ-13	4 V	2 N-Channel (Dual)	10.6 nC	Surface Mount	8-PowerTDFN	PowerDI5060-8	11.1 A 42 A	AEC-Q101	805 pF	2.6 W	Automotive	15 mOhm	40 V	-55 °C	175 ░C	MOSFET (Metal Oxide)
Diodes Inc DMTH4011SPD-13	4 V	2 N-Channel (Dual)	10.6 nC	Surface Mount	8-PowerTDFN	PowerDI5060-8	11.1 A 42 A	AEC-Q101	805 pF	2.6 W	Automotive	15 mOhm	40 V	-55 °C	175 ░C	MOSFET (Metal Oxide)

Catalog

40V 175°C Dual N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application

• High Conversion Efficiency

• Low RDS(ON)– Minimizes On State Losses

• Low Input Capacitance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DMTH4011SPDQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: backlighting, power-management functions, and DC-DC converters.