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N-Channel Enhancement Mode MOSFET
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N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET
| Part | Gate Charge (Max) | Mounting Type | Package / Case | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Vgs (Max) | Vgs(th) (Max) | Input Capacitance (Ciss) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Power Dissipation (Max) | Technology | Current - Continuous Drain (Id) (Ta) | FET Type | Drain to Source Voltage (Vdss) | Rds On (Max) | Package Name | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Diodes Inc | 7.7 nC | Surface Mount | SC-70 SOT-323 | 1.8 V | 10 V | 12 V | 1.2 V | 281 pF | -55 °C | 150 °C | 500 mW | MOSFET (Metal Oxide) | 3.5 A | N-Channel | 20 V | 42 mOhm | SOT-323 | ||
 Diodes Inc | 7.7 nC | Surface Mount | SC-70 SOT-323 | 1.8 V | 10 V | 12 V | 1.2 V | 281 pF | -55 °C | 150 °C | 500 mW | MOSFET (Metal Oxide) | 3.5 A | N-Channel | 20 V | 42 mOhm | SOT-323 | AEC-Q101 | Automotive |