
MIC4467 Series
Manufacturer: Microchip Technology
IC GATE DRVR LOW-SIDE 14DIP
| Part | Number of Drivers | Voltage - Supply (Maximum) | Voltage - Supply (Minimum) | Input Type | Logic Voltage - VIH | Logic Voltage - VIL | Channel Type | Package Length | Package Name | Package Width | Rise Time (Typ) | Fall Time (Typ) | Gate Type | Gate Channel | Mounting Type | Current - Peak Output (Source) | Current - Peak Output (Sink) | Operating Temperature (Min) | Operating Temperature (Max) | Driven Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology | 4 | 18 V | 4.5 V | Inverting | 2.4 V | 0.8 V | Independent | 0.3 in | 14-DIP | 7.62 mm | 14 ns | 13 ns | MOSFET N-Channel P-Channel MOSFET | N-Channel P-Channel | Through Hole | 1.2 A | 1.2 A | 0 °C | 70 °C | Low-Side |
Microchip Technology | 4 | 18 V | 4.5 V | Inverting | 2.4 V | 0.8 V | Independent | 0.295 in | 16-SOIC | 7.5 mm | 14 ns | 13 ns | MOSFET N-Channel P-Channel MOSFET | N-Channel P-Channel | Surface Mount | 1.2 A | 1.2 A | -40 °C | 85 °C | Low-Side |
Microchip Technology | 4 | 18 V | 4.5 V | Inverting | 2.4 V | 0.8 V | Independent | 0.3 in | 14-DIP | 7.62 mm | 14 ns | 13 ns | MOSFET N-Channel P-Channel MOSFET | N-Channel P-Channel | Through Hole | 1.2 A | 1.2 A | 0 °C | 70 °C | Low-Side |
Microchip Technology | 4 | 18 V | 4.5 V | Inverting | 2.4 V | 0.8 V | Independent | 0.295 in | 16-SOIC | 7.5 mm | 14 ns | 13 ns | MOSFET N-Channel P-Channel MOSFET | N-Channel P-Channel | Surface Mount | 1.2 A | 1.2 A | 0 °C | 70 °C | Low-Side |
Microchip Technology | 4 | 18 V | 4.5 V | Inverting | 2.4 V | 0.8 V | Independent | 0.295 in | 16-SOIC | 7.5 mm | 14 ns | 13 ns | MOSFET N-Channel P-Channel MOSFET | N-Channel P-Channel | Surface Mount | 1.2 A | 1.2 A | -40 °C | 85 °C | Low-Side |
Microchip Technology | 4 | 18 V | 4.5 V | Inverting | 2.4 V | 0.8 V | Independent | 0.295 in | 16-SOIC | 7.5 mm | 14 ns | 13 ns | MOSFET | N-Channel P-Channel | Surface Mount | 1.2 A | 1.2 A | 0 °C | 70 °C | Low-Side |
Microchip Technology | 4 | 18 V | 4.5 V | Inverting | 2.4 V | 0.8 V | Independent | 0.295 in | 16-SOIC | 7.5 mm | 14 ns | 13 ns | MOSFET N-Channel P-Channel MOSFET | N-Channel P-Channel | Surface Mount | 1.2 A | 1.2 A | 0 °C | 70 °C | Low-Side |
Microchip Technology | 4 | 18 V | 4.5 V | Inverting | 2.4 V | 0.8 V | Independent | 0.295 in | 16-SOIC | 7.5 mm | 14 ns | 13 ns | MOSFET N-Channel P-Channel MOSFET | N-Channel P-Channel | Surface Mount | 1.2 A | 1.2 A | -40 °C | 85 °C | Low-Side |
Microchip Technology | 4 | 18 V | 4.5 V | Inverting | 2.4 V | 0.8 V | Independent | 0.295 in | 16-SOIC | 7.5 mm | 14 ns | 13 ns | MOSFET N-Channel P-Channel MOSFET | N-Channel P-Channel | Surface Mount | 1.2 A | 1.2 A | 0 °C | 70 °C | Low-Side |
Microchip Technology | 4 | 18 V | 4.5 V | Inverting | 2.4 V | 0.8 V | Independent | 0.3 in | 14-DIP | 7.62 mm | 14 ns | 13 ns | MOSFET N-Channel P-Channel MOSFET | N-Channel P-Channel | Through Hole | 1.2 A | 1.2 A | -40 °C | 85 °C | Low-Side |