DMPH6050SK3Q Series

175°C 60V Dual P-Channel Enhancement Mode MOSFET

Catalog

175°C 60V Dual P-Channel Enhancement Mode MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Qualification	Configuration	Grade	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Power Dissipation (Max)
Diodes Inc DMPH6050SFG-7	6.1 A 18 A	4.5 V 10 V	MOSFET (Metal Oxide)	3 V	Surface Mount	20 V	P-Channel	24.1 nC	60 V	3.2 W	1293 pF	-55 °C	175 ░C	50 mOhm
Diodes Inc DMPH6050SPD-13	26 A		MOSFET (Metal Oxide)	3 V	Surface Mount						1525 pF	-55 °C	175 ░C		AEC-Q101	2 P-Channel	Automotive	8-PowerTDFN	14.5 nC	PowerDI5060-8
Diodes Inc DMPH6050SK3Q-13	7.2 A 23.6 A	4.5 V 10 V	MOSFET (Metal Oxide)	3 V	Surface Mount	20 V	P-Channel		60 V		1377 pF	-55 °C	175 ░C	50 mOhm				DPAK (2 Leads + Tab) SC-63 TO-252-3	25 nC	TO-252-3	1.9 W
Diodes Inc DMPH6050SFGQ-7	6.1 A 18 A	4.5 V 10 V	MOSFET (Metal Oxide)	3 V	Surface Mount	20 V	P-Channel	24.1 nC	60 V		1293 pF	-55 °C	175 ░C	50 mOhm	AEC-Q101		Automotive	8-PowerVDFN		POWERDI3333-8	1.2 W

Catalog

175°C 60V Dual P-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application

• Low RDS(ON) – ensures on state losses are minimized

• Occupies just 33% of the board area occupied by SO-8 enabling smaller end product

• Lead-Free Finish; RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• Qualified to AEC-Q101 Standards

• PPAP Capable

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.