Beta
⌘K
IR MOSFET™ N-CHANNEL ; SO-8 PACKAGE; 6.8 MOHM;
| Part | Gate Charge (Qg) (Max) @ Vgs | Technology | Power Dissipation (Max) | Supplier Device Package | Package / Case | Package / Case [y] | Package / Case [x] | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 27 nC | MOSFET (Metal Oxide) | 2.5 W | 8-SO | 8-SOIC | 3.9 mm | 0.154 in | 2080 pF | N-Channel | 20 V | 4.5 V 10 V | -55 °C | 150 °C | Surface Mount | 2.25 V | 30 V | 6.8 mOhm |