
Catalog
P-channel vertical D-MOS intermediate level FET
P-channel vertical D-MOS intermediate level FET
| Part | Technology | Mounting Type | FET Type | Current - Continuous Drain (Id) (Tc) | Vgs (Max) | Gate Charge (Max) | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature | Rds On (Max) | Drain to Source Voltage (Vdss) | Package Name | Input Capacitance (Ciss) (Max) | Vgs(th) (Max) | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | MOSFET (Metal Oxide) | Surface Mount | P-Channel | 3 A | 20 V | 25 nC | TO-261-4 TO-261AA | 10 V | 150 °C | 250 mOhm | 30 V | SOT-223 | 250 pF | 2.8 V | 1.65 W |
Nexperia USA Inc. | MOSFET (Metal Oxide) | Surface Mount | P-Channel | 3 A | 20 V | 25 nC | TO-261-4 TO-261AA | 10 V | 150 °C | 250 mOhm | 30 V | SOT-223 | 250 pF | 2.8 V | 1.65 W |