MOSFET N-CH 30V 75A D2PAK
| Part | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Type | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Package / Case | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 75 A | 10 V | D2PAK | 200 W | 5730 pF | 20 V | N-Channel | 3.3 mOhm | 200 nC | 30 V | Surface Mount | -55 °C | 175 ░C | 4 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) |
Infineon Technologies | 75 A | 10 V | D2PAK | 200 W | 5730 pF | 20 V | N-Channel | 3.3 mOhm | 200 nC | 30 V | Surface Mount | -55 °C | 175 ░C | 4 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) |
Infineon Technologies | 75 A | 10 V | TO-220AB | 330 W | 5730 pF | 20 V | N-Channel | 3.3 mOhm | 200 nC | 30 V | Through Hole | -55 °C | 175 ░C | 4 V | TO-220-3 | MOSFET (Metal Oxide) |
Infineon Technologies | 75 A | 10 V | TO-262 | 200 W | 5730 pF | 20 V | N-Channel | 3.3 mOhm | 200 nC | 30 V | Through Hole | -55 °C | 175 ░C | 4 V | I2PAK TO-262-3 Long Leads TO-262AA | MOSFET (Metal Oxide) |