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DIODE SIL CARB 650V 30A TO247-3
| Part | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Technology | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Grade | Supplier Device Package | Current - Reverse Leakage @ Vr | Qualification | Mounting Type | Package / Case | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 0 ns | 650 V | No Recovery Time | SiC (Silicon Carbide) Schottky | 30 A | 1.7 V | Automotive | PG-TO247-3-41 | 120 µA | AEC-Q100/101 | Through Hole | TO-247-3 | -40 °C | 175 ░C | 860 pF |