S2D Series

Catalog

DIODE GEN PURP 200V 2A DO214AA

Part	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Qualification	Mounting Type	Grade	Current - Average Rectified (Io)	Package / Case	Current - Reverse Leakage @ Vr	Speed	Speed	Supplier Device Package	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If
Taiwan Semiconductor Corporation S2DHR5G	1500 ns	30 pF	Standard	150 °C	-55 °C	AEC-Q101	Surface Mount	Automotive	2 A	DO-214AA SMB	1 µA	Standard Recovery >500ns	200 mA	SMB	DO-214AA	200 V
Taiwan Semiconductor Corporation S2DH	1500 ns	30 pF	Standard	150 °C	-55 °C	AEC-Q101	Surface Mount	Automotive	2 A	DO-214AA SMB	1 µA	Standard Recovery >500ns	200 mA	SMB	DO-214AA	200 V
Taiwan Semiconductor Corporation S2DA	1500 ns	30 pF	Standard	150 °C	-55 °C		Surface Mount		1.5 A	DO-214AC SMA	5 µA	Standard Recovery >500ns	200 mA		DO-214AC (SMA)	200 V	1.1 V
Taiwan Semiconductor Corporation S2D	1500 ns	30 pF	Standard	150 °C	-55 °C		Surface Mount		2 A	DO-214AA SMB	1 µA	Standard Recovery >500ns	200 mA	SMB	DO-214AA	200 V
Taiwan Semiconductor Corporation S2DA R3G	1500 ns	30 pF	Standard	150 °C	-55 °C		Surface Mount		1.5 A	DO-214AC SMA	5 µA	Standard Recovery >500ns	200 mA		DO-214AC (SMA)	200 V	1.1 V
Taiwan Semiconductor Corporation S2D R5G	1500 ns	30 pF	Standard	150 °C	-55 °C		Surface Mount		2 A	DO-214AA SMB	1 µA	Standard Recovery >500ns	200 mA	SMB	DO-214AA	200 V