Beta
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IR MOSFET™ P-CHANNEL ; SO-8 PACKAGE; 17.5 MOHM;
| Part | Technology | FET Type | Vgs (Max) | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Supplier Device Package | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Package / Case [y] | Package / Case [x] | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET (Metal Oxide) | P-Channel | 20 V | 2.5 W | 30 V | 8-SO | 17.5 mOhm | -55 °C | 150 °C | 1270 pF | 9.8 A | Surface Mount | 4.5 V 10 V | 8-SOIC | 3.9 mm | 0.154 in | 41 nC | 2.4 V |