IMZA65R020 Series

Catalog

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 83 A, 650 V, 0.018 OHM, TO-247

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies IMZA65R020M2HXKSA1	57 nC	18 mOhm	Through Hole	273 W	650 V	15 V	20 V	83 A	5.6 V	SiC (Silicon Carbide Junction Transistor)	-7 V 23 V	N-Channel	2038 pF	TO-247-4	PG-TO247-4-8	-55 °C	175 ░C