DMN2080UCB4 Series

N-Channel Enhancement Mode MOSFET

Catalog

N-Channel Enhancement Mode MOSFET

Part	FET Type	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Power Dissipation (Max) [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)
Diodes Inc DMN2080UCB4-7	N-Channel	MOSFET (Metal Oxide)	1 V	540 pF	1.5 V 4.5 V	Surface Mount	-55 °C	150 °C	8 V	710 mW	4-XFBGA WLBGA	56 mOhm	7.4 nC	3 A	X2-WLB0606-4	20 V

Catalog

N-Channel Enhancement Mode MOSFET

Key Features

• Built-in G-S Protection Diode Against ESD 2kV HBM

• Trench-MOS Technology with The Lowest RDS(ON):

• RDS(ON) = 43mΩ to Minimize On-State Losses

• VGS(TH) = 0.7V Typ. for A Low Turn-On Potential

• CSP with Footprint 0.8mm × 0.8mm

• Height = 0.35mm for Low Profile

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) with thin WLCSP packaging process and yet maintain superior switching performance, making it ideal for high efficiency power management applications.