MSC2X31SDA170 Series

1700V Dual Silicon Carbide (SiC) Schottky Barrier Diode (SBD)

Catalog

1700V Dual Silicon Carbide (SiC) Schottky Barrier Diode (SBD)

Part	Mounting Type	Diode Count	Diode Configuration	Current - Reverse Leakage	Voltage - Forward (Vf) (Max)	Package / Case	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io) (per Diode)	Technology	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Package Name	Reverse Recovery Time (trr)
Microchip Technology MSC2X31SDA170J	Chassis Mount	2	Independent	200 µA	1.8 V	miniBLOC SOT-227-4	1700 V	30 A	SiC (Silicon Carbide) Schottky	175 °C	-55 °C	500 mA	No Recovery Time	500 mA 500 mA	SOT-227 (ISOTOP®)	0 ns

Catalog

1700V Dual Silicon Carbide (SiC) Schottky Barrier Diode (SBD)

Description

MSC2X31SDA170 is part of our newest family of Dual SiC Schottky Barrier Diode (SBD) devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.