DMN3025LFDF Series

30V N-Channel Enhancement Mode MOSFET

Catalog

30V N-Channel Enhancement Mode MOSFET

Part	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Technology	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case [y]	Package / Case [x]
Diodes Inc DMN3025LFV-7	Surface Mount	20 V	9.8 nC	25 A	N-Channel	-55 °C	150 °C	4.5 V 10 V	900 mW	MOSFET (Metal Oxide)	PowerDI3333-8 (Type UX)	8-PowerVDFN	2 V	18 mOhm	500 pF	30 V
Diodes Inc DMN3025LFG-7	Surface Mount	20 V	11.6 nC	7.5 A	N-Channel	-55 °C	150 °C	4.5 V 10 V	2 W	MOSFET (Metal Oxide)	POWERDI3333-8	8-PowerVDFN	2 V	18 mOhm		30 V
Diodes Inc DMN3025LFDF-7	Surface Mount	20 V		9.9 A	N-Channel	-55 °C	150 °C	4.5 V 10 V		MOSFET (Metal Oxide)	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad	2 V	20.5 mOhm		30 V	641 pF	2.1 W	13.2 nC
Diodes Inc DMN3025LSS-13	Surface Mount	20 V		7.2 A	N-Channel	-55 °C	150 °C	4.5 V 10 V		MOSFET (Metal Oxide)	8-SO	8-SOIC	2 V	20 mOhm		30 V	641 pF	1.4 W	13.2 nC	3.9 mm	0.154 in

Catalog

30V N-Channel Enhancement Mode MOSFET

Key Features

• Low RDS(ON) – Ensures On-State Losses are Minimized

• Small Form Factor Thermally Efficient Package Enables Higher Density End Products

• Occupies just 33% of the Board Area Occupied by SO-8 EnablingSmaller End Product

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.