NVMFD020N06C Series

Power MOSFET Power, N-Channel, DUAL SO8FL, 60 V, 16.3 mΩ, 32 A

Catalog

Power MOSFET Power, N-Channel, DUAL SO8FL, 60 V, 16.3 mΩ, 32 A

Part	Package / Case	Mounting Type	Rds On (Max)	Qualification	Gate Charge (Max)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Package Width (8-DFN)	Package Name	Package Length (8-DFN)	Power - Max (Tc)	Power - Max (Ta)	Channel Count	Configuration	Configuration - Features	Input Capacitance (Ciss) (Max)	Technology	Grade	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)
ON Semiconductor NVMFD020N06CT1G	8-PowerTDFN	Surface Mount	20.3 mOhm	AEC-Q101	5.8 nC 5.8 nC	4 V	60 V	6 mm	8-DFN Dual Flag SO8FL-Dual	5 mm	31 W	3.1 W	2	N-Channel	Dual	355 pF	MOSFET (Metal Oxide)	Automotive	-55 °C	175 °C	8 A	27 A
ON Semiconductor NVMFWD020N06CT1G	8-PowerTDFN	Surface Mount	20.3 mOhm	AEC-Q101	5.8 nC 5.8 nC	4 V	60 V	6 mm	8-DFN Dual Flag SO8FL-Dual	5 mm	31 W	3.1 W	2	N-Channel	Dual	355 pF	MOSFET (Metal Oxide)	Automotive	-55 °C	175 °C	8 A	27 A

Catalog

Power MOSFET Power, N-Channel, DUAL SO8FL, 60 V, 16.3 mΩ, 32 A

Key Features

• Small Footprint (5x6 mm)

• Low RDS(on)

• Low QGand Capacitance

• NVMFWD016N06C − Wettable Flank Option

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb-Free and are RoHS Compliant

Description

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.