MSRT25060 Series
Manufacturer: GeneSiC Semiconductor
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⌘K
DIODE MODULE GP 600V 250A 3TOWER
| Part | Technology | Current - Reverse Leakage | Package / Case | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Speed - Recovery Time | Voltage - Forward (Vf) (Max) | Diode Pair Count | Diode Configuration | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Package Name | Voltage - DC Reverse (Vr) (Max) | Mounting Type | Current - Average Rectified (Io) (per Diode) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GeneSiC Semiconductor | ||||||||||||||||
GeneSiC Semiconductor | Standard | 15 µA | Three Tower | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 1.2 V | 1 pair | Common Cathode | 150 °C | -55 °C | Three Tower | 600 V | Chassis Mount | 250 A |