1T5G Series
Manufacturer: Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A TS-1
| Part | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Speed - Recovery Time | Package / Case | Current - Average Rectified (Io) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) | Technology | Package Name | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Mounting Type | Capacitance | Current - Reverse Leakage |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | Axial T-18 | 1 A | 600 V | 1 V 1 V | Standard | TS-1 | 150 °C | -55 °C | Through Hole | 10 pF | 5 µA |
Taiwan Semiconductor Corporation | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | Axial T-18 | 1 A | 600 V | 1 V 1 V | Standard | TS-1 | 150 °C | -55 °C | Through Hole | 10 pF | 5 µA |