DIODE GEN PURP 600V 1A TS-1
| Part | Voltage - Forward (Vf) (Max) @ If | Capacitance @ Vr, F | Package / Case | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Technology | Current - Average Rectified (Io) | Current - Reverse Leakage @ Vr | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Speed | Speed |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 1 V | 10 pF | T-18 Axial | 150 °C | -55 °C | Standard | 1 A | 5 µA | TS-1 | 600 V | Through Hole | Standard Recovery >500ns | 200 mA |
Taiwan Semiconductor Corporation | 1 V | 10 pF | T-18 Axial | 150 °C | -55 °C | Standard | 1 A | 5 µA | TS-1 | 600 V | Through Hole | Standard Recovery >500ns | 200 mA |