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MOSFET N-CH 500V 14A TO3PIS
| Part | Supplier Device Package | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Technology | Mounting Type | Rds On (Max) @ Id, Vgs | FET Type | Package / Case | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | TO-3P(N)IS | 150 °C | 10 V | 2600 pF | 80 W | 500 V | 58 nC | 14 A | MOSFET (Metal Oxide) | Through Hole | 400 mOhm | N-Channel | SC-65-3 TO-3P-3 | 30 V |