MOSFET, N-CH, 200V, 5A, TO-252AA ROHS COMPLIANT: YES
| Part | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Mounting Type | Package / Case | Technology | Supplier Device Package | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 10 V | 4 V | 23 nC | 600 mOhm | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | TO-252AA (DPAK) | 200 V | 5 A | 300 pF | 43 W | N-Channel | -55 °C | 175 ░C | 20 V |
Infineon Technologies | 10 V | 4 V | 23 nC | 600 mOhm | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | TO-252AA (DPAK) | 200 V | 5 A | 300 pF | 43 W | N-Channel | -55 °C | 175 ░C | 20 V |
Infineon Technologies | 10 V | 4 V | 23 nC | 600 mOhm | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | TO-252AA (DPAK) | 200 V | 5 A | 300 pF | 43 W | N-Channel | -55 °C | 175 ░C | 20 V |
Infineon Technologies | 10 V | 4 V | 23 nC | 600 mOhm | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | TO-252AA (DPAK) | 200 V | 5 A | 300 pF | 43 W | N-Channel | -55 °C | 175 ░C | 20 V |
Infineon Technologies | 10 V | 4 V | 23 nC | 600 mOhm | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | TO-252AA (DPAK) | 200 V | 5 A | 300 pF | 43 W | N-Channel | -55 °C | 175 ░C | 20 V |
Infineon Technologies | 10 V | 4 V | 23 nC | 600 mOhm | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | TO-252AA (DPAK) | 200 V | 5 A | 300 pF | 43 W | N-Channel | -55 °C | 175 ░C | 20 V |