MOSFET-LINEAR-500V Series

500V Linear MOSFET

Catalog

500V Linear MOSFET

Part	Package Name	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs (Max)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Mounting Type	Input Capacitance (Ciss) (Max)	Package / Case	Technology	FET Type	Rds On (Max)
Microchip Technology APL502LG	TO-264 (L) TO-264 [L]	15 V	730 W	30 V	4 V	-55 °C	150 °C	500 V	58 A	Through Hole	9000 pF	TO-264-3 TO-264AA	MOSFET (Metal Oxide)	N-Channel	90 mOhm
Microchip Technology APL502B2G	T-MAX™ [B2]	15 V	730 W	30 V	4 V	-55 °C	150 °C	500 V	58 A	Through Hole	9000 pF	TO-247-3 Variant	MOSFET (Metal Oxide)	N-Channel	90 mOhm
Microchip Technology APL502J	ISOTOP®	15 V	568 W	30 V	4 V	-55 °C	150 °C	500 V	52 A	Chassis Mount	9000 pF	miniBLOC SOT-227-4	MOSFET (Metal Oxide)	N-Channel	90 mOhm

Catalog

500V Linear MOSFET

Description

What is a Linear MOSFET? A MOSFET specifically designed to be more robust than a standard MOSFET when operated with both high voltage and high current near DC conditions (>100 msecs). The Problem with SMPS MOSFETs MOSFETs optimized for high-frequency SMPS applications have poor high voltage DC SOA. Most SMPS-type MOSFETs overstate SOA capability at high voltage on the datasheets. Above ~30V and DC conditions, SOA drops faster than is indicated by Power Dissipation (PD) limited operation. For pulsed loads (t <10 ms), there is generally no problem using a standard MOSFET. Technology Innovation Introduced in 1999, Microchip modified its proprietary patented self-aligned metal gate MOSFET technology for enhanced performance in high voltage, linear applications. These linear MOSFETs typically provide 1.5–2.0 times the DC SOA capability at high voltage compared to other MOSFET technologies optimized for switching applications.