DMT31M7LSS Series

N-Channel Enhancement Mode MOSFET

Catalog

N-Channel Enhancement Mode MOSFET

Part	Rds On (Max) @ Id, Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package
Diodes Inc DMT31M7LSS-13	2.7 mOhm	8-SOIC	3.9 mm	0.154 in	4.5 V 10 V	N-Channel	25 A 78 A	-55 °C	150 °C	MOSFET (Metal Oxide)	30 V	1.7 W 5.9 W	Surface Mount	84 nC	3 V	20 V	5492 pF	8-SO

Catalog

N-Channel Enhancement Mode MOSFET

Key Features

• Low RDS(ON) – Minimizes On-State Losses

• Excellent Qgd x RDS(ON) Product (FOM)

• Advanced Technology for DC-DC Converters

• Small Form Factor Thermally Efficient Package Enables Higher Density End Products

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.