MBR12020 Series
Manufacturer: GeneSiC Semiconductor
DIODE MOD SCHOTT 20V 120A 2TOWER
| Part | Voltage - Forward (Vf) (Max) | Diode Pair Count | Diode Configuration | Current - Average Rectified (Io) (per Diode) | Current - Reverse Leakage | Voltage - DC Reverse (Vr) (Max) | Package Name | Package / Case | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Technology | Mounting Type | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 650 mV | 1 pair | Common Cathode | 120 A | 3 mA | 20 V | Twin Tower | Twin Tower | 500 ns | 200 mA | Schottky | Chassis Mount | 150 °C | -55 °C |
GeneSiC Semiconductor | 650 mV | 1 pair | Common Cathode | 120 A | 3 mA | 20 V | Twin Tower | Twin Tower | 500 ns | 200 mA | Schottky | Chassis Mount | 150 °C | -55 °C |
GeneSiC Semiconductor | 650 mV | 1 pair | Common Anode | 120 A | 3 mA | 20 V | Twin Tower | Twin Tower | 500 ns | 200 mA | Schottky | Chassis Mount | 150 °C | -55 °C |
GeneSiC Semiconductor | 650 mV | 1 pair | Common Anode | 120 A | 3 mA | 20 V | Twin Tower | Twin Tower | 500 ns | 200 mA | Schottky | Chassis Mount | 150 °C | -55 °C |