MOSFET 2P-CH 20V 4.3A 8SOIC
| Part | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Configuration | Power - Max [Max] | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | FET Feature | Package / Case | Package / Case [y] | Package / Case [x] | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 610 pF | 20 V | 2 P-Channel | 2 W | 1.5 V | 22 nC | 90 mOhm | 4.3 A | MOSFET (Metal Oxide) | -55 °C | 150 °C | 8-SOIC | Logic Level Gate | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount |
Infineon Technologies | 610 pF | 20 V | 2 P-Channel | 2 W | 1.5 V | 22 nC | 90 mOhm | 4.3 A | MOSFET (Metal Oxide) | -55 °C | 150 °C | 8-SOIC | Logic Level Gate | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount |