STGB40V60F Series

Trench gate field-stop IGBT, V series 600 V, 40 A very high speed

Catalog

Trench gate field-stop IGBT, V series 600 V, 40 A very high speed

Part	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge	Voltage - Collector Emitter Breakdown (Max) [Max]	IGBT Type	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Package / Case	Test Condition	Mounting Type	Switching Energy
STMicroelectronics STGB40V60F	-55 °C	175 ░C	226 nC	600 V	Trench Field Stop	52 ns 208 ns	2.3 V	283 W	TO-263 (D2PAK)	80 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 Ohm 15 V 40 A 400 V	Surface Mount	411 µJ 456 µJ

Catalog

Trench gate field-stop IGBT, V series 600 V, 40 A very high speed

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.