DMN16M0UCA6 Series

N-Channel Enhancement Mode MOSFET

Catalog

N-Channel Enhancement Mode MOSFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Power - Max [Max]	Vgs(th) (Max) @ Id	Configuration	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology
Diodes Inc DMN16M0UCA6-7	-55 °C	150 °C	12 V	900 mW	1.3 V	2 N-Channel (Dual) Common Drain	24 nC	X4-DSN2112-6	6-SMD No Lead	Surface Mount	17 A	MOSFET (Metal Oxide)

Catalog

N-Channel Enhancement Mode MOSFET

Key Features

• CSP with Footprint 2.11mm × 1.18mm

• Height = 0.11mm for Low Profile

• ESD Protection of Gate

Description

This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.