
DS1245W Series
Manufacturer: Analog Devices Inc./Maxim Integrated
IC NVSRAM 1M PARALLEL 34PWRCAP
| Part | Memory Format | Memory Depth | Memory Width | Access Time | Package Name | Write Cycle Time - Word | Write Cycle Time - Page | Voltage - Supply (Maximum) | Voltage - Supply (Minimum) | Technology | Memory Interface (Type) | Memory Size | Mounting Type | Operating Temperature (Max) | Operating Temperature (Min) | Package / Case | Memory Type | Package Width | Package Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices Inc./Maxim Integrated | NVSRAM | 128 K | 8 bit | 100 ns | 34-PowerCap Module | 100 ns | 100 ns | 3.6 V | 3 V | NVSRAM (Non-Volatile SRAM) | Parallel | 1 Mbit | Surface Mount | 85 °C | -40 °C | 34-PowerCap™ Module | Non-Volatile | ||
Analog Devices Inc./Maxim Integrated | NVSRAM | 128 K | 8 bit | 150 ns | 34-PowerCap Module | 150 ns | 150 ns | 3.6 V | 3 V | NVSRAM (Non-Volatile SRAM) | Parallel | 1 Mbit | Surface Mount | 70 °C | 0 °C | 34-PowerCap™ Module | Non-Volatile | ||
Analog Devices Inc./Maxim Integrated | NVSRAM | 128 K | 8 bit | 150 ns | 34-PowerCap Module | 150 ns | 150 ns | 3.6 V | 3 V | NVSRAM (Non-Volatile SRAM) | Parallel | 1 Mbit | Surface Mount | 70 °C | 0 °C | 34-PowerCap™ Module | Non-Volatile | ||
Analog Devices Inc./Maxim Integrated | NVSRAM | 128 K | 8 bit | 150 ns | 32-DIP Module 32-EDIP | 150 ns | 150 ns | 3.6 V | 3 V | NVSRAM (Non-Volatile SRAM) | Parallel | 1 Mbit | Through Hole | 70 °C | 0 °C | Non-Volatile | 15.24 mm | 0.6 in | |
Analog Devices Inc./Maxim Integrated | NVSRAM | 128 K | 8 bit | 100 ns | 34-PowerCap Module | 100 ns | 100 ns | 3.6 V | 3 V | NVSRAM (Non-Volatile SRAM) | Parallel | 1 Mbit | Surface Mount | 70 °C | 0 °C | 34-PowerCap™ Module | Non-Volatile | ||
Analog Devices Inc./Maxim Integrated | NVSRAM | 128 K | 8 bit | 100 ns | 32-DIP Module 32-EDIP | 100 ns | 100 ns | 3.6 V | 3 V | NVSRAM (Non-Volatile SRAM) | Parallel | 1 Mbit | Through Hole | 70 °C | 0 °C | Non-Volatile | 15.24 mm | 0.6 in | |
Analog Devices Inc./Maxim Integrated | NVSRAM | 128 K | 8 bit | 100 ns | 32-DIP Module 32-EDIP | 100 ns | 100 ns | 3.6 V | 3 V | NVSRAM (Non-Volatile SRAM) | Parallel | 1 Mbit | Through Hole | 85 °C | -40 °C | Non-Volatile | 15.24 mm | 0.6 in | |
Analog Devices Inc./Maxim Integrated | NVSRAM | 128 K | 8 bit | 100 ns | 32-DIP Module 32-EDIP | 100 ns | 100 ns | 3.6 V | 3 V | NVSRAM (Non-Volatile SRAM) | Parallel | 1 Mbit | Through Hole | 85 °C | -40 °C | Non-Volatile | 15.24 mm | 0.6 in | |
Analog Devices Inc./Maxim Integrated | NVSRAM | 128 K | 8 bit | 150 ns | 32-DIP Module 32-EDIP | 150 ns | 150 ns | 3.6 V | 3 V | NVSRAM (Non-Volatile SRAM) | Parallel | 1 Mbit | Through Hole | 70 °C | 0 °C | Non-Volatile | 15.24 mm | 0.6 in | |
Analog Devices Inc./Maxim Integrated | NVSRAM | 128 K | 8 bit | 100 ns | 32-DIP Module 32-EDIP | 100 ns | 100 ns | 3.6 V | 3 V | NVSRAM (Non-Volatile SRAM) | Parallel | 1 Mbit | Through Hole | 70 °C | 0 °C | Non-Volatile | 15.24 mm | 0.6 in |