
TC4431 Series
Manufacturer: Microchip Technology
MOSFET DRIVER, 2 OUTPUTS, HIGH SIDE AND LOW SIDE, 4.5V-30V SUPPLY, 1.5A AND 7 OHM OUTPUT, DIP-8
| Part | Gate Type | Number of Drivers | Rise Time (Typ) | Fall Time (Typ) | Input Type | Driven Configuration | Operating Temperature (Min) | Operating Temperature (Max) | Package Name | Logic Voltage - VIH | Logic Voltage - VIL | Package Length | Package Width | Channel Type | Current - Peak Output (Sink) | Current - Peak Output (Source) | Mounting Type | Voltage - Supply (Minimum) | Voltage - Supply (Maximum) | Gate Channel |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 1 | 25 ns | 33 ns | Inverting | High-Side Low-Side | -40 °C | 150 °C | 8-DIP 8-PDIP | 2.4 V | 0.8 V | 0.3 in | 7.62 mm | Single | 1.5 A | 1.5 A | Through Hole | 4.5 V | 30 VDC | N-Channel P-Channel |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 1 | 25 ns | 33 ns | Inverting | High-Side Low-Side | -40 °C | 150 °C | 8-SOIC | 2.4 V | 0.8 V | 0.154 in | 3.9 mm | Single | 1.5 A | 1.5 A | Surface Mount | 4.5 V | 30 VDC | N-Channel P-Channel |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 1 | 25 ns | 33 ns | Inverting | High-Side Low-Side | -40 °C | 150 °C | 8-CDIP 8-CERDIP | 2.4 V | 0.8 V | 0.3 in | 7.62 mm | Single | 1.5 A | 1.5 A | Through Hole | 4.5 V | 30 VDC | N-Channel P-Channel |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 1 | 25 ns | 33 ns | Inverting | High-Side Low-Side | 0 °C | 150 °C | 8-DIP 8-PDIP | 2.4 V | 0.8 V | 0.3 in | 7.62 mm | Single | 1.5 A | 1.5 A | Through Hole | 4.5 V | 30 VDC | N-Channel P-Channel |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 1 | 25 ns | 33 ns | Inverting | High-Side Low-Side | -40 °C | 150 °C | 8-SOIC | 2.4 V | 0.8 V | 0.154 in | 3.9 mm | Single | 1.5 A | 1.5 A | Surface Mount | 4.5 V | 30 VDC | N-Channel P-Channel |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 1 | 25 ns | 33 ns | Inverting | High-Side Low-Side | -40 °C | 150 °C | 8-SOIC | 2.4 V | 0.8 V | 0.154 in | 3.9 mm | Single | 1.5 A | 1.5 A | Surface Mount | 4.5 V | 30 VDC | N-Channel P-Channel |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 1 | 25 ns | 33 ns | Inverting | High-Side Low-Side | 0 °C | 150 °C | 8-SOIC | 2.4 V | 0.8 V | 0.154 in | 3.9 mm | Single | 1.5 A | 1.5 A | Surface Mount | 4.5 V | 30 VDC | N-Channel P-Channel |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 1 | 25 ns | 33 ns | Inverting | High-Side Low-Side | 0 °C | 150 °C | 8-SOIC | 2.4 V | 0.8 V | 0.154 in | 3.9 mm | Single | 1.5 A | 1.5 A | Surface Mount | 4.5 V | 30 VDC | N-Channel P-Channel |
Microchip Technology | MOSFET | 1 | 25 ns | 33 ns | Inverting | High-Side Low-Side | -40 °C | 150 °C | 8-SOIC | 2.4 V | 0.8 V | 0.154 in | 3.9 mm | Single | 1.5 A | 1.5 A | Surface Mount | 4.5 V | 30 VDC | N-Channel P-Channel |
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 1 | 25 ns | 33 ns | Inverting | High-Side Low-Side | -40 °C | 150 °C | 8-DIP 8-PDIP | 2.4 V | 0.8 V | 0.3 in | 7.62 mm | Single | 1.5 A | 1.5 A | Through Hole | 4.5 V | 30 VDC | N-Channel P-Channel |