V12P10 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
DIODE SCHOTTKY 120V 3.9A TO277A
| Part | Current - Reverse Leakage | Current - Average Rectified (Io) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) | Mounting Type | Operating Temperature - Junction (Min) | Operating Temperature - Junction (Max) | Package / Case | Package Name | Technology | Grade | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 250 µA 250 µA 400 µA | 3.9 A 12 A | 100 V 120 V | 700 mV 830 mV | Surface Mount | -40 °C | 150 °C | 3-PowerDFN TO-277 | TO-277A (SMPC) | Schottky | Automotive | 500 ns | 200 mA | AEC-Q101 |
 Vishay General Semiconductor - Diodes Division | 250 µA 250 µA | 12 A | 100 V | 700 mV | Surface Mount | -40 °C | 150 °C | 3-PowerDFN TO-277 | TO-277A (SMPC) | Schottky | 500 ns | 200 mA | ||
Vishay General Semiconductor - Diodes Division | 250 µA 250 µA 400 µA | 12 A | 100 V 120 V | 700 mV 830 mV | Surface Mount | -40 °C | 150 °C | 3-PowerDFN TO-277 | TO-277A (SMPC) | Schottky | Automotive | 500 ns | 200 mA | AEC-Q101 |