2N5038-Transistor Series

MIL-PRF-19500/439 This specification covers the performance requirements for NPN silicon, high-power, 2N5038 and 2N5039 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/439. Two levels of product assurance (JANHC and JANKC) are provided for each un-encapsulated device.

Manufacturer: Microchip Technology

Catalog

Part	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max)	Current - Collector (Ic) (Max)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Transistor Type	Package / Case	Vce Saturation (Max)	Package Name	DC Current Gain (hFE) (Min)
Microchip Technology 2N5038	90 V	1 µA	20 A	Through Hole	-65 °C	200 °C	NPN	TO-204AA TO-3	2.5 V	TO-3	50

Catalog

Description

This specification covers the performance requirements for NPN silicon, high-power, 2N5038 and 2N5039 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/439. Two levels of product assurance (JANHC and JANKC) are provided for each un-encapsulated device. The device package outlines are as follows: TO-204AA (TO-3) for all encapsulated device types. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/439.