DMTH6002LPS Series

60V 175°C N-Channel Enhancement Mode MOSFET

Catalog

60V 175°C N-Channel Enhancement Mode MOSFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type
Diodes Inc DMTH6002LPS-13	-55 °C	175 ░C	N-Channel	MOSFET (Metal Oxide)	60 V	20 V	100 A	8-PowerTDFN	3 V	130.8 nC	167 W	6555 pF	2 mOhm	PowerDI5060-8 (Type K)	6 V 10 V	Surface Mount

Catalog

60V 175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application

• Thermally Efficient Package – Cooler Running Applications

• High Conversion Efficiency

• Low RDS(ON)– Minimizes On-State Losses

• <1.1mm Package Profile – Ideal for Thin Applications

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.