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MOSFET N-CH 1100V 3A TO263
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Technology | Rds On (Max) @ Id, Vgs | FET Type | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | -55 °C | 150 °C | 1100 V | Surface Mount | 1350 pF | 150 W | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 42 nC | 10 V | MOSFET (Metal Oxide) | 4 Ohm | N-Channel | 20 V | 3 A | TO-263AA | 5 V |