TK31J60 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.099 Ω@10V, TO-3P(N), DTMOSⅣ
| Part | Vgs (Max) | Rds On (Max) | Current - Continuous Drain (Id) (Ta) | Technology | Gate Charge (Max) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature | Input Capacitance (Ciss) (Max) | FET Type | Drain to Source Voltage (Vdss) | Package / Case | Power Dissipation (Max) | Package Name | Mounting Type | Vgs(th) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 30 V | 88 mOhm | 30.8 A | MOSFET (Metal Oxide) | 105 nC | 10 V | 150 °C | 3000 pF | N-Channel | 600 V | SC-65-3 TO-3P-3 | 230 W | TO-3P(N) | Through Hole | 3.7 V |
 Toshiba Semiconductor and Storage | 30 V | 88 mOhm | 30.8 A | MOSFET (Metal Oxide) | 86 nC | 10 V | 150 °C | 3000 pF | N-Channel | 600 V | SC-65-3 TO-3P-3 | 230 W | TO-3P(N) | Through Hole | 3.7 V |