FES8 Series

Manufacturer: Vishay General Semiconductor - Diodes Division

Catalog

DIODE GEN PURP 150V 8A TO220AC

Part	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Current - Reverse Leakage	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max)	Package Name	Technology	Reverse Recovery Time (trr)	Package / Case	Mounting Type	Qualification	Grade
Vishay General Semiconductor - Diodes Division FES8CT-E3/45	500 ns	200 mA	10 µA	150 °C	-55 °C	150 V	8 A	950 mV	TO-220AC	Standard	35 ns	TO-220-2	Through Hole
Vishay General Semiconductor - Diodes Division FES8DT/45	500 ns	200 mA	10 µA	150 °C	-55 °C	200 V	8 A	950 mV	TO-220AC	Standard	35 ns	TO-220-2	Through Hole
Vishay General Semiconductor - Diodes Division FES8JTL-7002E3/45
Vishay General Semiconductor - Diodes Division FES8GT/45	500 ns	200 mA	10 µA	150 °C	-55 °C	400 V	8 A	1.3 V	TO-220AC	Standard	50 ns	TO-220-2	Through Hole
Vishay General Semiconductor - Diodes Division FES8JT-E3/45	500 ns	200 mA	10 µA	150 °C	-55 °C	600 V	8 A	1.5 V	TO-220AC	Standard	50 ns	TO-220-2	Through Hole
Vishay General Semiconductor - Diodes Division FES8BTHE3/45	500 ns	200 mA	10 µA	150 °C	-55 °C	100 V	8 A	950 mV	TO-220AC	Standard	35 ns	TO-220-2	Through Hole	AEC-Q101	Automotive
Vishay General Semiconductor - Diodes Division FES8GTHE3/45	500 ns	200 mA	10 µA	150 °C	-55 °C	400 V	8 A	1.3 V	TO-220AC	Standard	50 ns	TO-220-2	Through Hole	AEC-Q101	Automotive
Vishay General Semiconductor - Diodes Division FES8GT-E3/45	500 ns	200 mA	10 µA	150 °C	-55 °C	400 V	8 A	1.3 V	TO-220AC	Standard	50 ns	TO-220-2	Through Hole
Vishay General Semiconductor - Diodes Division FES8JT/45	500 ns	200 mA	10 µA	150 °C	-55 °C	600 V	8 A	1.5 V	TO-220AC	Standard	50 ns	TO-220-2	Through Hole
Vishay General Semiconductor - Diodes Division FES8BT-E3/45	500 ns	200 mA	10 µA	150 °C	-55 °C	100 V	8 A	950 mV	TO-220AC	Standard	35 ns	TO-220-2	Through Hole