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IR MOSFET™ N-CHANNEL POWER MOSFET ; SUPERSO8 5X6 PACKAGE; 4.1 MOHM;
| Part | Package / Case | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Vgs (Max) | Drain to Source Voltage (Vdss) | FET Type | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 8-PowerTDFN | MOSFET (Metal Oxide) | -55 °C | 150 °C | 4.1 mOhm | 10 V | 3.6 W 156 W | 8-PQFN (5x6) | 4175 pF | Surface Mount | 20 V | 60 V | N-Channel | 4 V | 21 A 100 A | 100 nC |