IC FLASH 32MBIT SPI/QUAD 8SOP
| Part | Memory Organization | Operating Temperature [Max] | Operating Temperature [Min] | Memory Interface | Memory Size | Mounting Type | Package / Case | Package / Case [y] | Package / Case [x] | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Supplier Device Package | Memory Format | Voltage - Supply [Min] | Voltage - Supply [Max] | Clock Frequency | Technology | Memory Type | Access Time | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited  | 4M x 8  | 105 °C  | -40 °C  | SPI - Quad I/O  | 32 Gbit  | Surface Mount  | 8-SOIC  | 3.9 mm  | 0.154 in  | 50 µs  | 2.4 ms  | 8-SOP  | FLASH  | 2.7 V  | 3.6 V  | 120 MHz  | FLASH - NOR  | Non-Volatile  | |
GigaDevice Semiconductor (HK) Limited  | 4M x 8  | 125 °C  | -40 °C  | SPI - Quad I/O  | 32 Gbit  | Surface Mount  | 8-UDFN Exposed Pad  | 140 µs  | 4 ms  | 8-USON (3x4)  | FLASH  | 2.7 V  | 3.6 V  | 133 MHz  | FLASH - NOR (SLC)  | Non-Volatile  | 7 ns  | ||
GigaDevice Semiconductor (HK) Limited  | 4M x 8  | 85 °C  | -40 °C  | SPI - Quad I/O  | 32 Gbit  | Surface Mount  | 8-SOIC  | 3.9 mm  | 0.154 in  | 50 µs  | 2.4 ms  | 8-SOP  | FLASH  | 2.7 V  | 3.6 V  | 120 MHz  | FLASH - NOR  | Non-Volatile  | |
GigaDevice Semiconductor (HK) Limited  | 4M x 8  | 105 °C  | -40 °C  | SPI - Quad I/O  | 32 Gbit  | Surface Mount  | 8-SOIC  | 3.9 mm  | 0.154 in  | 140 µs  | 4 ms  | 8-SOP  | FLASH  | 2.7 V  | 3.6 V  | 133 MHz  | FLASH - NOR (SLC)  | Non-Volatile  | 7 ns  | 
GigaDevice Semiconductor (HK) Limited  | 4M x 8  | 105 °C  | -40 °C  | SPI - Quad I/O  | 32 Gbit  | Surface Mount  | 8-SOIC  | 3.9 mm  | 0.154 in  | 50 µs  | 2.4 ms  | 8-SOP  | FLASH  | 2.7 V  | 3.6 V  | 120 MHz  | FLASH - NOR  | Non-Volatile  |