GD25Q32 Series
Manufacturer: GigaDevice Semiconductor (HK) Limited
IC FLASH 32MBIT SPI/QUAD 8SOP
| Part | Operating Temperature (Max) | Operating Temperature (Min) | Memory Interface (Type) | Memory Format | Write Cycle Time - Page | Write Cycle Time - Word | Memory Size | Package Name | Voltage - Supply (Maximum) | Voltage - Supply (Minimum) | Package Length | Package Width | Memory Type | Mounting Type | Technology | Memory Width | Memory Depth | Clock Frequency | Package / Case | Access Time |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited | 105 °C | -40 °C | SPI - Quad I/O | FLASH | 2.4 ms | 50 µs | 4 MB | 8-SOIC 8-SOP | 3.6 V | 2.7 V | 0.154 in | 3.9 mm | Non-Volatile | Surface Mount | FLASH - NOR | 8 bit | 4 M | 120 MHz | ||
GigaDevice Semiconductor (HK) Limited | 125 °C | -40 °C | SPI - Quad I/O | FLASH | 4 ms | 140 µs | 4 MB | 8-USON | 3.6 V | 2.7 V | 3 mm | 4 mm | Non-Volatile | Surface Mount | FLASH - NOR (SLC) | 8 bit | 4 M | 133 MHz | 8-UDFN Exposed Pad | 7 ns |
GigaDevice Semiconductor (HK) Limited | 85 °C | -40 °C | SPI - Quad I/O | FLASH | 2.4 ms | 70 µs | 4 MB | 8-USON | 3.6 V | 2.7 V | 3 mm | 4 mm | Non-Volatile | Surface Mount | FLASH - NOR (SLC) | 8 bit | 4 M | 133 MHz | 8-UDFN Exposed Pad | 7 ns |
GigaDevice Semiconductor (HK) Limited | 85 °C | -40 °C | SPI - Quad I/O | FLASH | 2.4 ms | 50 µs | 4 MB | 8-SOIC 8-SOP | 3.6 V | 2.7 V | 0.154 in | 3.9 mm | Non-Volatile | Surface Mount | FLASH - NOR | 8 bit | 4 M | 120 MHz | ||
GigaDevice Semiconductor (HK) Limited | 85 °C | -40 °C | SPI - Quad I/O | FLASH | 2.4 ms | 50 µs | 4 MB | 8-SOIC 8-SOP | 3.6 V | 2.7 V | 0.154 in | 3.9 mm | Non-Volatile | Surface Mount | FLASH - NOR | 8 bit | 4 M | 120 MHz | ||
GigaDevice Semiconductor (HK) Limited | 105 °C | -40 °C | SPI - Quad I/O | FLASH | 4 ms | 140 µs | 4 MB | 8-SOIC 8-SOP | 3.6 V | 2.7 V | 0.154 in | 3.9 mm | Non-Volatile | Surface Mount | FLASH - NOR (SLC) | 8 bit | 4 M | 133 MHz | 7 ns | |
GigaDevice Semiconductor (HK) Limited | 105 °C | -40 °C | SPI - Quad I/O | FLASH | 2.4 ms | 50 µs | 4 MB | 8-SOIC 8-SOP | 3.6 V | 2.7 V | 0.154 in | 3.9 mm | Non-Volatile | Surface Mount | FLASH - NOR | 8 bit | 4 M | 120 MHz | ||
GigaDevice Semiconductor (HK) Limited | 85 °C | -40 °C | SPI - Quad I/O | FLASH | 2.4 ms | 50 µs | 4 MB | 8-WSON | 3.6 V | 2.7 V | 5 mm | 6 mm | Non-Volatile | Surface Mount | FLASH - NOR | 8 bit | 4 M | 120 MHz | 8-WDFN Exposed Pad | |
GigaDevice Semiconductor (HK) Limited | 85 °C | -40 °C | SPI - Quad I/O | FLASH | 2.4 ms | 50 µs | 4 MB | 8-SOIC 8-SOP | 3.6 V | 2.7 V | 0.209 in | 5.3 mm | Non-Volatile | Surface Mount | FLASH - NOR | 8 bit | 4 M | 120 MHz |